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HiPerFASTTM IGBT with Diode
IXGH 32N60BU1
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 2.3 V = 80 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W C C C C Nm/lb.in. g
TO-247 AD
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
Features International standard packages JEDEC TO-247 SMD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Very fast switching speeds for high frequency applications
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.0 500 8 100 2.3 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 750A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2003 IXYS All rights reserved
DS95567C(02/03)
IXGH32N60BU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 270 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 23 40 25 20 100 80 0.6 25 25 1 120 120 1.2 0.25 200 150 150 35 75 S pF pF pF nC nC nC ns ns ns ns ns ns mJ ns ns mJ 0.62 K/W K/W
e P
TO-247 AD Outline
gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Dim.
1.2 mJ
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 15 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 240 A/s 10 VR = 360 V TJ = 125C 150 IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C 35
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH32N60BU1
100
TJ = 25C
200
TJ = 25C
80
IC - Amperes
IC - Amperes
60 40 20
VGE = 15V 13V 11V 9V 7V
VGE = 15V
13V 11V
160 120 80
9V
7V
40
5V
5V
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
100
TJ = 125C
1.75
VGE = 15V IC = 64A
VCE (sat) - Normalized
80
1.50
IC - Amperes
60 40 20 0
1.25
IC = 32A
1.00
IC = 16A
0
1
2
3
4
5
6
7
0.75 25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
100
VCE = 10V
1.15 1.10
BV/VGE(th) - Normalized
80
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25
VGE(th) IC = 250A
IC - Amperes
60 40
TJ = 125C
BVCES IC = 250A
20
TJ = 25C
0
3
4
5
6
7
8
9
10
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5. Admittance Curves
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
G32N60B P1
(c) 2003 IXYS All rights reserved
IXGH32N60BU1
2.5
TJ = 125C
5
RG = 10
E(ON)
2.5 2.0
TJ = 125C IC = 32A E(ON)
5 4
2.0
E(ON) - millijoules
4 3
E(OFF)
E(OFF) - milliJoules
E(OFF) - millijoules
1.5 1.0 0.5 0.0
0 20 40 60
E(ON) - millijoules
1.5
E(OFF)
3 2 1 0 60
2 1 0 80
1.0 0.5 0.0
0
10
20
30
40
50
Fig. 7. Dependence of tfi and EOFF on IC.
IC - Amperes
RG - Ohms
Fig. 8. Dependence of tfi and EOFF on RG.
15 12
IC = 32A VCE = 300V
100
IC - Amperes
VGE - Volts
10
TJ = 125C
9 6 3 0 0 25 50 75 100 125 150
RG = 4.7 dV/dt < 5V/ns
1
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
1
D=0.5 D=0.2
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH32N60BU1
Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR
25
TJ = 125C
100 80
1000 800
VFR
Current - Amperes
60 40 20 0 0.5
TJ = 100C
15 10 5
tfr
600 400 200 0 600
TJ = 25C
0 1.0 1.5 2.0 2.5 0 100 200 300 400 500
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0 0.8
IRM
Fig.15 Reverse Recovery Chargee
4
TJ = 100C VR = 350V IF = 30A
max.
Qr - nanocoulombs
Normalized IRM /Qr
3
2
typ. IF = 60A
0.6 0.4 0.2 0.0 0
Qr
1
IF = 30A IF = 15A
0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350V IF = 30A
max.
Fig.17 Reverse Recovery Time
0.8
IF = 30A
max.
TJ = 100C VR = 350V
trr - nanoseconds
30
0.6
typ. IF = 60A
IRM - Amperes
typ. IF = 60A
20
IF = 30A IF = 15A
0.4
IF = 30A IF = 15A
10
0.2
0 200 400 600
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
(c) 2003 IXYS All rights reserved
tfr - nanoseconds
TJ = 150C
20
IF = 37A
VFR - Volts
IXGH32N60BU1
Fig.18 Diode Transient Thermal resistance junction to case
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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